International Workshop on Emerging Semiconductor Technology (IWEST) 2023
Emerging Semiconductor Technology for a Sustainable Future
10 – 11 August 2023
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Grand Copthorne Waterfront Hotel Singapore
Waterfront Ballroom
Level 2
General Co-Chair: Associate Professor Gong Xiao (National University of Singapore)
General Co-Chair: Assistant Professor Xuanyao (Kelvin) Fong (National University of Singapore)
Distinguished Speakers’ Biographies
Photo Gallery
Workshop Day 1 Schedule
Workshop Day 2 Schedule
Day 1, Thu 10 Aug
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Time |
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08:00 – 08:55 |
Registration |
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08:55 – 09:00 |
Opening Speech |
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Time |
Speaker |
Presentation Title |
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09:00 – 09:45 |
National University of Singapore |
Novel Material-System Co-Design Opportunities for Analog-Non-Volatile In-Memory Computing and Reconfigurable Edge-AI |
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09:45 – 10:30 |
SK Hynix |
Small, Big, Great-Semiconductor Opportunities |
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10:30 – 10:45 |
Coffee Break |
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10:45 – 11:30 |
University of Tokyo |
HfZrO2-based Ferroelectric Devices for Lower- Power Memory and AI Applications |
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11:30 – 12:15 |
imec |
Nanosheet-based Device Architectures Using Both Wafer Sides: Key Enablers of Advanced CMOS Logic Scaling & New STCO Opportunities |
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12:15 – 14:00 |
Lunch |
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14:00 – 14:45 |
National University of Singapore |
Interfacial Engineering of Ferroelectricity of HfZrO2 Thin Films |
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14:45 – 15:30 |
Seoul National University |
Hafnia-based Ferroelectric Memories: Device Physics Strongly Correlated to Materials Chemistry |
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15:30 – 15:45 |
Coffee Break |
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15:45 – 16:30 |
Rochester Institute of Technology |
A New Look into Charge Based Memory: From Storage to Computing |
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16:30 – 16:55 |
Synopsys |
Design Technology Co-Optimization of RF Power Amplifier Designs with GaN Device Technology |
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16:55 – 17:20 |
Silvaco Singapore Pte Ltd |
Silvaco TCAD Overview: Semiconductor Process and Device Simulation |
Day 2, Fri 11 Aug
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Time |
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08:00 – 09:00 |
Registration |
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Time |
Speaker |
Presentation Title |
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09:00 – 09:45 |
Southern University of Science and Technology & Lund University |
Nanomaterials Research for GaN-based Optoelectronics Applications |
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09:45 – 10:30 |
Virginia Tech |
Ultra-High Density GaN based Power Converters for Data Center Applications |
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10:30 – 10:45 |
Coffee Break |
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10:45 – 11:30 |
Soitec |
Enabling Heterogeneous Materials and System Integration by Smartcut Technology |
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11:30 – 12:15 |
Nanyang Technological University |
High-Frequency GaN HEMTs on SiC and Si Development in Singapore |
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12:15 – 14:00 |
Lunch |
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14:00 – 14:45 |
IME, A*STAR |
Silicon Carbide Technology Development at A*STAR-IME: Current Status and Future Plans |
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14:45 – 15:30 |
Fraunhofer Institute |
The Potential of GaN and AlN based Power Devices and the Challenges of Making GaN and AlN Crystals and Wafers |
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15:30 – 15:45 |
Coffee Break |
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15:45 – 16:30 |
Singapore-MIT Alliance (SMART) |
Monolithic CMOS + GaN HEMT Integrated Circuits for Wireless Applications |
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16:30 – 17:15 |
imec |
Amorphous IGZO-TFTs for Memory and Analog in-memory Computing |
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End of workshop |
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Distinguished Speakers’ Biographies
Speaker: Prof. Aaron THEAN
Talk Title: Novel Material-System Co-Design Opportunities for Analog-Non-Volatile In-Memory Computing and Reconfigurable Edge-AI
Biography:
Prof. Aaron Thean is a Professor of Electrical and Computer Engineering at the National University of Singapore (NUS). He is currently the Deputy President (Academic Affairs) and Provost at NUS. In addition, he holds several technical leadership responsibilities at the University; which includes Director of SHINE research center on Next-Generation Hybrid Electronics research. Prior to NUS, Aaron Thean was the Vice President of Logic Technologies at IMEC. Working with Semiconductor Industry leaders like Intel, TSMC, Samsung, Globalfoundries, Apple, and Sony, he directed the research and development of next-generation semiconductor technologies and emerging nano-device architectures.
Prior to joining IMEC in 2011, he was with Qualcomm’s CDMA technologies in San Diego, California. Aaron and his group worked on Qualcomm’s 20nm and 16nm mobile System-On-Chip technologies. From 2007 to 2009, Aaron was with IBM, where he developed the 28-nm and 32-nm low-power bulk CMOS technology at IBM East Fishkill, New York. Before IBM, Aaron was with Freescale Semiconductor (and Motorola) where he led research on many novel devices. Aaron graduated from University of Illinois at Champaign-Urbana, USA, where he received his B.Sc. (Highest Honors), M.Sc., and Ph.D. degrees in Electrical Engineering (Edmund J. James Scholar). He has published over 300 technical papers and holds more than 50 US patents.
Speaker: Dr. Myung-Hee NA
Talk Title: Small, Big, Great-Semiconductor Opportunities
Biography:
Dr. Myung-Hee Na is the Vice President of Research Division at SK Hynix.
Currently she is responsible for leading next-generation memory technology research. Prior to joining Sk Hynix, she was the Vice President of Technology Solutions and Enablement at imec where she was responsible for CMOS technology research for advanced CMOS and AI technology. After completing her Ph.D in Physics, Dr. Na started her career at IBM in 2001, where she held various technical, managerial and executive roles until early 2019. During that time, she served as Distinguished Engineer and Technical Executive for semiconductor technology R&D. At IBM Research, she successfully led Research and Development for multiple generations of semiconductor technologies, including high-K metal gate, FinFET, and Nanosheet development.
She received several IBM Awards for her technical contributions. Moreover, she has co-authored numerous research papers and holds multiple U.S. and international patents.
Speaker: Prof. Shinichi TAKAGI
Talk Title: HfZrO2-based Ferroelectric Devices for Lower-Power Memory and AI Applications
Biography:
Shinichi Takagi received B.S., M.S., and Ph.D. degrees in electronic engineering from the University of Tokyo, Japan, in 1982, 1984, and 1987, respectively. He joined the Toshiba Research and Development Center, Japan, in 1987, where he was engaged in research on the device physics of Si MOSFETs. From 1993 to 1995, he was a Visiting Scholar at Stanford University, where he studied Si/SiGehetero-structure devices. In October 2003, he moved to the University of Tokyo, where he is currently working as a professor in the Department of Electrical Engineering and Information Systems. He has authored and co-authored more than 1100 papers in technical journals and international conferences. Also, he received 18 awards including IEEE Paul Rappaport Award (2014), IEEE Andrew S. Grove Award (2013), IEEE George E. Smith Award (2003), and Purple Ribbon Medal from the Japanese government (2017). His recent interests include the science and technologies of advanced CMOS devices using Ge and III-Vs, ferroelectric devices, and cryo-CMOS.
Dr. Takagi served on the technical program committee of several international conferences including IEDM, Symposium on VLSI Technology, IRPS, SSDM, and ISSCC. He is a member of the IEEE Electron Device Society and the Japan Society of Applied Physics.
Speaker: Dr. Anabela VELOSO
Talk Title: Nanosheet-based Device Architectures Using Both Wafer Sides: Key Enablers of Advanced CMOS Logic Scaling & New STCO Opportunities
Biography:
Anabela Veloso received a Ph.D. from INESC-IST-Lisbon University, Portugal in 2002. Since 2001, she has been working at Imec, in Leuven, Belgium, where she is a principal member of technical staff. Currently, her main research interests are in the areas of advanced CMOS device physics, integration, characterization, and technology, with recent focus on the exploration of scaled nanowires/nanosheets based FETs (with lateral or vertical transport), logic with power routing moved to the wafer’s backside (and expansion to other functions/devices’ migration to the backside), and overall novel device schemes considering in particular possible new options for transistor engineering and connectivity from the wafer’s front/backside.
She has authored or co-authored more than 200 papers published in peer-reviewed international conference proceedings and technical journals, presented 20 invited conference talks, and has been (co-)inventor of more than 23 filed/granted patents. She has also been serving in several conference committees including IEDM, SSDM, ECS Meeting, and the Symposium on VLSI Technology and Circuits.
Speaker: Prof. Jingsheng CHEN
Talk Title: Interfacial Engineering of Ferroelectricity of HfZrO2 Thin Films
Biography:
Prof. Chen Jingsheng is currently with Department of Materials Science and Engineering, NUS. He obtained his Ph.D. degree in 1999 in Lanzhou University, China and joined NUS in December 2007. During 2001-2007 he worked at the Data Storage Institute as a research scientist. He has authored/co-authored more than 300 refereed journal papers including Nature, Nature Nanotechnology, Nature Comm. Science Advance, Advanced Materials, Physical Review X, Physical Review Letter etc., 3 book chapters, holds over ten patents and has made more than 100 invited presentations in the international conferences.
His research work has obtained more than 12700 citations with H index of 59. His research interest includes magnetic, and oxide based non-volatile memories, spintronics, ferroelectric tunnel junction, strongly correlated oxide materials. He secured more than S$17 million research grants from government and around US$ 1 million from Seagate Technology and more than S$ 1 million from GlobalFoundries. The magnetic recording media in the newest generation of HDD (HAMR) applied a few of his inventions. He is 2022 IEEE Magnetic Society Distinguished Lecturer.
Speaker: Prof. Min Hyuk PARK
Talk Title: Hafnia-based Ferroelectric Memories: Device Physics Strongly Correlated to Materials Chemistry
Biography:
Min Hyuk Park received his B.S. and Ph.D. degrees in materials science and engineering from Seoul National University, Seoul, Korea, in 2008 and 2014, respectively. He worked as a postdoc at Seoul National University (2014–2015) and NaMLab GmbH in Dresden, Germany (2015–2018), and an assistant professor in the School of Materials Science and Engineering of Pusan National University (2018–2021).
He is currently an assistant professor in the Department of Materials Science and Engineering of Seoul National University since 2021. His research interests include ferroelectric and antiferroelectric thin films for neuromorphic computing, memory, energy storage, energy harvesting, and solid-state cooling.
Speaker: Prof. Kai NI
Talk Title: A New Look into Charge Based Memory: From Storage to Computing
Biography:
Kai Ni received the B.S. degree in Electrical Engineering from University of Science and Technology of China, Hefei, China in 2011, and Ph.D. degree of Electrical Engineering from Vanderbilt University, Nashville, TN, USA in 2016 by working on characterization, modeling, and reliability of III-V MOSFETs. Since then, he became a postdoctoral associate at University of Notre Dame, working on ferroelectric devices for nonvolatile memory and novel computing paradigms.
He was an assistant professor in Electrical & Microelectronic Engineering at Rochester Institute of Technology in 2019 and joined University of Notre Dame in 2023. His current interests lie in nanoelectronic devices empowering unconventional computing, domain-specific accelerator, and memory technology.
Speaker: Dr. Ran YU
Talk Title: Design Technology Co-Optimization of RF Power Amplifier Designs with GaN Device Technology
Biography:
Dr. Yu Ran received the Ph.D. degree from Tyndall National Institute, University College Cork, Ireland in 2013 under the supervision of SOI pioneer Prof. Jean-Pierre Collinge.
He fabricated first Germanium Junctionless transistor during his PhD and has more than 80 publications with more than 3000 citations. Currently he works in Synopsys on TCAD department.
Speaker: Dr. Sun TAO
Talk Title: SilvacoTCAD Overview: Semiconductor Process and Device Simulation
Biography:
Dr. Sun Tao has over 20 years of experience in semiconductors, currently he is TCAD applications manager in SILVACO Singapore.
Speaker: Prof. Lars SAMUELSON
Talk Title: Nanomaterials Research for GaN-based Optoelectronics Applications
Biography:
Lars Samuelson is since 1988 Professor at Lund University and since 2021 also Chair Professor at SUSTech, Southern University of Science and Technology, in Shenzhen, China and Dean of the Institute of Nanoscience and Applications, INA. His research is focused on nanoscale materials physics, with a special focus on epitaxial growth, optical properties and on potential applications in optoelectronics. Beside the academic research he also has strong engagements as Chief Scientists in high-tech companies such as Glo AB and Hexagem AB. He is a Member of the Royal Swedish Academy of Sciences (Physics) and of the Royal Swedish Academy of Engineering Sciences and was awarded the Einstein Professorship by the Chinese Academy of Sciences. He is Fellow of the Institute of Physics (FInst) of the UK, Fellow of the American Physical Society, APS (Materials Physics), and Int. Fellow of the Japanese Society of Applied Physics, JSAP.
In 2022 he was given the top award from the Royal Swedish Academy of Engineering Sciences, the “Great Gold Medal”. Samuelson is the author of well over 700 articles (h-index 90, Web-of-Science, listed in the top 1% highly cited researchers by Web-of-Science), and has given >300 plenary/invited talks at international conferences and workshops.
Speaker: Prof. Qiang LI
Talk Title: Ultra-High Density GaN based Power Converters for Data Center Applications
Biography:
Dr. QiangLi received the B.S. and M.S. degrees from Zhejiang University, China, in 2003 and 2006, respectively and the Ph.D. degree from Virginia Tech, Blacksburg, VA, in 2011. Dr. Li currently is a full Professor in the Center for Power Electronics Systems at Virginia Tech. His research interests include, high-frequency power conversion and controls, high-density electronics packaging and magnetics integration, and power solutions for high performance computing, datacenter, electric vehicles and energy storage.
Dr. Li published over 230 peer-reviewed technical publications, including more than 70 journal articles; he has received six prize paper awards. Dr. Li is an associate editor for IEEE Transactions on Power Electronics and IEEE Journal of Emerging and Selected Topics in Power Electronics Dr. Li is also a recipient of National Science Foundation (NSF) Career Award.
Speaker: Dr. Bich-Yen NGUYEN
Talk Title: Enabling Heterogeneous Materials and System Integration by Smartcut Technology
Biography:
Bich-Yen Nguyen joined Soitec as a Senior Fellow supporting the technology advisor and development of new device fields and applications. Bich-Yen is also responsible for the joint substrate engineering and low-temperature Smartcut for 2.5D/3D integration with external partners/customers. Prior to joining Soitec, Bich-Yen was a senior manager at Freescale Semiconductor and a Freescale/Motorola Dan Noble Fellow. Bich-Yen has been recognized for her leadership and research in developing Freescale/Motorola’s CMOS technology for advanced integrated circuit products. She was instrumental in transferring process technology to production since 1980.
Her honors and awards include the recipient of Dan Noble Fellow in 2001, the highest technical award in Motorola, Master of Innovation Award in 2003. She received the 1st National Award “Women in Technology Lifetime Achievement Award” in 2004, and IEEE Fellow in 2020. She holds over 200 worldwide patents and has authored more than 300 technical papers on IC processes, integration, and device technologies.
Email: Bich-yen.nguyen@soitec.com
Speaker: Prof. Geok Ing NG
Talk Title: High-Frequency GaN HEMTs on SiC and Si Development in Singapore
Biography:
Professor Geok Ing NG received his Ph. D degree in electrical engineering from the University of Michigan, Ann Arbor in 1990. Since joining the Nanyang Technological University (NTU) Singapore in the School of EEE in 1995, he has held several key leadership appointments including the Head of Microelectronics Division, Founding Directors of Microsystem Technologies Development Centre and the Silicon Technologies Centre of Excellence (Si COE). He is currently the Program Director of the Center for Microsystems in TL@NTU and the Director of the Centre for Micro-and NanoElectronics (CMNE) in the School of EEE.
In 2023, he was appointed as the Centre Director for the National Gallium Nitride Technology Centre (NGTC). He has authored and co-authored more than 300 international journal and conference papers and delivered plenary and invited talks at several international conferences in the areas of III-V small bandgap (InP) and large bandgap (GaN) compound semiconductors. Currently, he serves as the member of the IEEE Electron Device Society Board of Governors, Editor of the IEEE Journals of Electron Device Society (JEDS) and Editorial Board Member of the open access journal Electronics. He also serves in the Steering Committee of the 2023 Electron Devices Technology and Manufacturing (EDTM).
Speaker: Dr. Navab SINGH
Talk Title: Silicon Carbide Technology Development at A*STAR-IME: Current Status and Future Plans
Biography:
Physicist by education and semiconductor technologist by training, Dr. Navab Singh is the Head of the Department of Advanced Process Modules, Engineering Lead of the National GaN Technology Centre (NGTC), and Technical Lead of the Silicon Carbide program at the A*STAR Institute of Microelectronics (IME), Singapore.
He is a recipient of the George E. Smith Award 2007, the Singapore National Technology Award 2008, and the A*STAR TALENT award 2010 for Leading, Educating and Nurturing Talents at IME.
Speaker: Dr. Elke MEISSNER
Talk Title: The Potential of GaN and AlN based Power Devices and the Challenges of Making GaN and AlN Crystals and Wafers
Biography:
Dr. Elke Meissner is a senior scientist at the department Materials of the Fraunhofer Institute of Integrated Systems and Device Technology (IISB) in Erlangen, Germany and head of the Nitrides group. In addition to her activities at Fraunhofer IISB, she carries out gallium nitride (GaN) crystal growth at the IISB’s branch lab Fraunhofer Technology Center for Semiconductor Materials (THM) in Freiberg (Saxony, Germany) and related fundamental research as a stuff member of the Technical Faculty of the University of Erlangen-Nuremberg at the Chair for Electron Devices. She is a highly experienced national and international strong professional collaborator. Skilled in crystal growth of nitrides, epitaxy, thin films, research and development of novel semiconductor materials, innovative semiconductors characterization and metrology.
As an individual she stands for more than 25 years of experience in various fields ranging from applied and experimental mineralogy, silicon nitride and related processes under high pressure and temperature and explicitly the crystal growth and related technologies of GaN and AlN. She is inventor or co-inventor of international patents, and has authored numerous peer-reviewed scientific publications. She has served on the chairs and committees of high-profile international conferences, and is supervising young researchers for PhD theses and is mentor for young females in natural and technical science.
Speaker: Dr. Kenneth LEE
Talk Title: Monolithic CMOS + GaN HEMT Integrated Circuits for Wireless Applications
Biography:
Dr. Kenneth E. Lee is the Senior Scientific Director of the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group at the Singapore-MIT Alliance for Research and Technology (SMART). In LEES, he is responsible for driving the core program effort to create a novel CMOS + III-V platform to enable new integrated electronic and photonic systems. This includes having oversight of multidisciplinary research in a complete vertical from materials and processes to devices, circuits and systems, so as to enable seamless integration with foundry-standard CMOS process flows.
Prior to this, Dr. Lee had stints in the Future Systems and Technology Directorate of the Ministry of Defence, as well as with the Applied Physics Laboratory in DSO National Laboratories, and in Temasek Laboratories at Nanyang Technological University. Dr. Lee has also served on various grant and project review panels for the Science and Engineering Research Council of A*STAR.
Dr. Lee received his B.S. and M.S. degrees from the University of Illinois at Urbana-Champaign in 1998 and 1999, respectively, and his Ph.D. degree from the Massachusetts Institute of Technology in 2009, all in Electrical Engineering.
Speaker: Dr. Subhali SUBHECHHA
Talk Title: Amorphous IGZO-TFTs for Memory and Analog in-memory Computing
Biography:
Subhali Subhechha is Senior Researcher and R&D Team Leader, Memory Devices at imec, Belgium. She received her Bachelors’ and Masters’ degrees in Electrical Engineering from Indian Institute of Technology Kanpur. She has been with imec, Belgium since 2013, working on different memory devices.
In 2019, she received her Ph.D. degree in Electrical Engineering from Katholieke Universiteit Leuven, Belgium, working on selectorless resistive switching memories. Her current interests are design, modeling and characterization of oxide semiconductor memories, 3D DRAM, novel memory concepts, and neuromorphic computing. She has served as a member of technical committees in IEDM, IPFA.